Determination of thickness and dielectric constant of thin transparent dielectric layers using Surface Plasmon Resonance
نویسندگان
چکیده
The determination of the thickness and dielectric constant of thin dielectric layers by means of surface plasmon resonance is discussed. It appears to be impossible to determine these parameters from one surface plasmon response experiment. This is illustrated theoretically. Variation of the refractive index of the solution in which surface plasmon experiments were performed allowed us to determine these parameters separately.
منابع مشابه
بررسی ثابت دی الکتریک لایه نازک SiO2با استفاده از آزمون بیضی سنجی
In this paper, we studied the optical behavior of SiO2 thin films prepared via sol-gel route using spin coating deposition from tetraethylorthosilicate (TEOS) as precursor. Thin films were annealed at different temperatures (400-600oC). Absorption edge and band gap of thin layers were measured using UV-Vis spectrophotometery. Optical refractive index and dielectric constant were measured by ell...
متن کاملDetermination of Resonance Frequency of Dominant and Higher Order Modes in Thin and Thick Circular Microstrip Patch Antennas with Superstrate by MWM (RESEARCH NOTE)
An accurate model named as the Modified Wolff Model (MWM) is presented as an efficient CAD tool for determination of resonant frequency of the dominant and higher order modes under the multi-layer condition in thin and thick circular microstrip patch antennas. The effects of dielectric cover on the resonant frequency obtained from MWM have been compared against the result of theoretical method ...
متن کاملThickness and dielectric constant determination of thin dielectric layers
We derive a method for the determination of the dielectric constant and thickness of a thin dielectric layer, deposited on top of a thick dielectric layer which is in turn present on a metal film. Reflection of pand s-polarlzed light from the metal layer yields minima for certain angles of incidence where the light is absorbed by the metal. The thin dielectric layer causes shifts in the angles ...
متن کاملControl capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers
Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...
متن کاملOptical properties of silicon nano layers by using Kramers- Kronig method
Silicon thin layers are deposited on glass substrates with the thickness of 103 nm, 147 nm and 197 nm. The layers are produced with electron gun evaporation method under ultra-high vacuum condition. The optical Reectance and the Transmittance of produced layers were measured by using spectrophotometer. The optical functions such as, real and imaginary part of refractive index, real and imaginar...
متن کامل